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| SHINDENGEN General Purpose Rectifiers SMT Bridges S1NB20 200V 1A FEATURES *oe Small Dual In-Line(:DIL) Package *oe mm pitch between terminals 5 *oe Applicable to Automatic Insertion APPLICATION *oe Switching power supply OUTLINE DIMENSIONS Case : 1N 1N Case : Unit : mm *oe Home Appliances, Office Equipment *oe Telecommuication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 200 V Average Rectified Forward Current50Hz sine wave, R-load, On glass-epoxy substrate, 1 I O Ta=25*Z A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value,30 Tj=25*Z A Current Squared Time I2t 1ms*...t*10ms* Tj=25*Z @ 4.5 A2 s *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF IF =0.5A, Pulse measurement, Rating of per diode Max.1.05 V R RM Reverse Current IR V =V , Pulse measurement, Rating of per diodeMax.10 EA Thermal Resistance AEjl junction to lead Max.15 *Z/W AEja junction to ambient Max.68 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1NBx 10 Forward Voltage 1 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 0.1 Pulse measurement per diode 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S1NBx 3 Forward Power Dissipation Forward Power Dissipation PF [W] 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S1NBx 1.4 Derating Curve Average Rectified Forward Current IO [A] 1.2 SIN 1 Glass-epoxy substrate Soldering land 9mm Conductor layer 35m 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air S1NBx 60 Peak Surge Forward Capability IFSM 10ms 10ms 50 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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